Development of Advanced Warpage Measurement Techniques

Microelectronics devices are comprised of various metal conductors separated by insulating materials.  As a result of a mismatch of coefficient of thermal expansion (CTE), the devices warp and distort during thermal excursions encountered in manufacturing process and actual operating conditions.  Several whole-field optical methods have been utilized for warpage measurement of electronics components: including Twyman/Green interferometry, shadow moiré and far-infrared interferometry which can measure submicron to mm warpage deformations.  Continuous efforts are made to meet various other surface conditions encountered in new applications.

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